federal_register: 2015-32718
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| document_number | title | type | abstract | publication_date | pub_year | pub_month | html_url | pdf_url | agency_names | agency_ids | excerpts |
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| 2015-32718 | Notice of Intent To Grant an Exclusive License | Notice | This notice is issued in accordance with 35 U.S.C. 209(e) and 37 CFR 404.7(a)(1)(i). NASA hereby gives notice of its intent to grant an exclusive license in the United States to practice the inventions described and claimed in U.S. Patent No. 7,341,883 titled "Silicon Germanium Semiconductive Alloy and Method Of Fabricating Same," NASA Case No. LAR-16868-1; U.S. Patent No. 7,514,726 titled "Graded Index Silicon Germanium on Lattice Matched Silicon Germanium Semiconductive Alloy," NASA Case No. LAR-16872-1; U.S. Patent No. 7,558,371 titled "Method of Generating X-Ray Diffraction Data for Integral Detection of Twin Defects in Super-Hetero-Epitaxial Materials," NASA Case No. LAR- 17044-1; U.S. Patent No, 7,906,358 titled "Epitaxial Growth of Cubic Crystalline Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal," NASA Case No. LAR-17185-1; U.S. Patent No. 8,226,767 titled "Hybrid Bandgap Engineering for Super-Hetero- Epitaxial Semiconductor Materials, and Products Thereof," NASA Case No. LAR-17405-1; U.S. Patent No. 8,257,491 titled "Rhombohedral Cubic Semiconductor Materials on Trigonal Substrate with Single Crystal Properties and Devices Based on Such Materials," NASA Case No. LAR- 17553-1; U.S. Patent No. 7,769,135 titled "X-ray Diffraction Wafer Mapping Method for Rhombohedral Super-Hetero-Epitaxy," NASA Case No. LAR-17554-1; U.S. Patent Application No. 14/202,699 titled "High Mobility Transport Layer Structures for Rhombohedral Si/Ge/SiGe Devices," NASA Case No. LAR-17841-1; U.S. Patent Application No. 14/ 204,535 titled "Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure," NASA Case No. LAR-17922-1; U.S. Patent No. 8,044,294 titled "Thermoelectric Materials and Devices," NASA Case No. LAR- 17381-1; and U.S. Patent Application No. 14/279,614 titled "Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure," NASA Case No. LAR-18133-1, to innoScience, Inc., having its principal place of business in Gaithersburg, Maryland. Certain patent rights in these inventions have been assigned to the United States of America as represented by the Administrator of the National Aeronautics and Space Administration. The prospective exclusive license will comply with the terms and conditions of 35 U.S.C. 209 and 37 CFR 404.7. | 2015-12-31 | 2015 | 12 | https://www.federalregister.gov/documents/2015/12/31/2015-32718/notice-of-intent-to-grant-an-exclusive-license | https://www.govinfo.gov/content/pkg/FR-2015-12-31/pdf/2015-32718.pdf | National Aeronautics and Space Administration | 301 | This notice is issued in accordance with 35 U.S.C. 209(e) and 37 CFR 404.7(a)(1)(i). NASA hereby gives notice of its intent to grant an exclusive license in the United States to practice the inventions described and claimed in U.S. Patent No. 7,341,883... |